Δημοσιεύσεις

Project Acronym: STEM
Title: First-principles studies on emerging materials
Affiliation: national technical university of athens
Pi: Tsetseris Leonidas
Research Field: chemical sciences and materials

Addition of the Lewis Acid Zn(C6F5)2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2 V−1 s−1
by Paterson, Alexandra F., Tsetseris, Leonidas, Li, Ruipeng, Basu, Aniruddha, Faber, Hendrik, Emwas, Abdul-Hamid, Panidi, Julianna, Fei, Zhuping, Niazi, Muhammad R., Anjum, Dalaver H., Heeney, Martin and Anthopoulos, Thomas D.
Abstract:
Abstract Incorporating the molecular organic Lewis acid tris(pentafluorophenyl)borane [B(C6F5)3] into organic semiconductors has shown remarkable promise in recent years for controlling the operating characteristics and performance of various opto/electronic devices, including, light-emitting diodes, solar cells, and organic thin-film transistors (OTFTs). Despite the demonstrated potential, however, to date most of the work has been limited to B(C6F5)3 with the latter serving as the prototypical air-stable molecular Lewis acid system. Herein, the use of bis(pentafluorophenyl)zinc [Zn(C6F5)2] is reported as an alternative Lewis acid additive in high-hole-mobility OTFTs based on small-molecule:polymer blends comprising 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene and indacenodithiophene–benzothiadiazole. Systematic analysis of the materials and device characteristics supports the hypothesis that Zn(C6F5)2 acts simultaneously as a p-dopant and a microstructure modifier. It is proposed that it is the combination of these synergistic effects that leads to OTFTs with a maximum hole mobility value of 21.5 cm2 V−1 s−1. The work not only highlights Zn(C6F5)2 as a promising new additive for next-generation optoelectronic devices, but also opens up new avenues in the search for high-mobility organic semiconductors.
Reference:
Addition of the Lewis Acid Zn(C6F5)2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2 V−1 s−1 (Paterson, Alexandra F., Tsetseris, Leonidas, Li, Ruipeng, Basu, Aniruddha, Faber, Hendrik, Emwas, Abdul-Hamid, Panidi, Julianna, Fei, Zhuping, Niazi, Muhammad R., Anjum, Dalaver H., Heeney, Martin and Anthopoulos, Thomas D.), In Advanced Materials, 2019.
Bibtex Entry:
@article{doi:10.1002-adma.201900871,
 author = {Paterson, Alexandra F. and Tsetseris, Leonidas and Li, Ruipeng and Basu, Aniruddha and Faber, Hendrik and Emwas, Abdul-Hamid and Panidi, Julianna and Fei, Zhuping and Niazi, Muhammad R. and Anjum, Dalaver H. and Heeney, Martin and Anthopoulos, Thomas D.},
 title = {Addition of the Lewis Acid Zn(C6F5)2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2 V−1 s−1},
 journal = {Advanced Materials},
 year = {2019},
 bibyear = {2019},
 month = {May},
 pages = {1900871},
 doi = {10.1002/adma.201900871},
 url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201900871},
 eprint = {https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201900871},
 abstract = {Abstract Incorporating the molecular organic Lewis acid tris(pentafluorophenyl)borane [B(C6F5)3] into organic semiconductors has shown remarkable promise in recent years for controlling the operating characteristics and performance of various opto/electronic devices, including, light-emitting diodes, solar cells, and organic thin-film transistors (OTFTs). Despite the demonstrated potential, however, to date most of the work has been limited to B(C6F5)3 with the latter serving as the prototypical air-stable molecular Lewis acid system. Herein, the use of bis(pentafluorophenyl)zinc [Zn(C6F5)2] is reported as an alternative Lewis acid additive in high-hole-mobility OTFTs based on small-molecule:polymer blends comprising 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene and indacenodithiophene–benzothiadiazole. Systematic analysis of the materials and device characteristics supports the hypothesis that Zn(C6F5)2 acts simultaneously as a p-dopant and a microstructure modifier. It is proposed that it is the combination of these synergistic effects that leads to OTFTs with a maximum hole mobility value of 21.5 cm2 V−1 s−1. The work not only highlights Zn(C6F5)2 as a promising new additive for next-generation optoelectronic devices, but also opens up new avenues in the search for high-mobility organic semiconductors.},
}