Δημοσιεύσεις

Project Acronym: AMONADE
Title: Atomistic MOdelling of NAnostructures and extended DEfects
Affiliation: aristotle university of thessaloniki
Pi: Joseph Kioseoglou
Research Field: physics

Hole-doped 2D InSe for spintronic applications
by Iordanidou, Konstantina, Houssa, Michel J.C., Kioseoglou, Joseph, Afanas’ev, Valeri V, Stesmans, Andre and Persson, Clas
Abstract:
Using first-principles calculations based on density functional theory, we study the magnetic and electronic properties of hole-doped two-dimensional InSe. Our simulations reveal that although 2D InSe is intrinsically non-magnetic, a stable ferromagnetic phase appears for hole densities in the range of 0.5×〖10〗^13/cm^2
Reference:
Hole-doped 2D InSe for spintronic applications (Iordanidou, Konstantina, Houssa, Michel J.C., Kioseoglou, Joseph, Afanas’ev, Valeri V, Stesmans, Andre and Persson, Clas), In ACS Applied Nano Materials, 2018.
Bibtex Entry:
@article{doi:10.1021-acsanm.8b01476,
 author = {Iordanidou, Konstantina and Houssa, Michel J.C. and Kioseoglou, Joseph and Afanas’ev, Valeri V and Stesmans, Andre and Persson, Clas},
 title = {Hole-doped 2D InSe for spintronic applications},
 journal = {ACS Applied Nano Materials},
 year = {2018},
 month = {November},
 bibyear = {2018},
 doi = {10.1021/acsanm.8b01476},
 url = {https://doi.org/10.1021/acsanm.8b01476},
 eprint = {https://doi.org/10.1021/acsanm.8b01476},
 abstract = { Using first-principles calculations based on density functional theory, we study the magnetic and electronic properties of hole-doped two-dimensional InSe. Our simulations reveal that although 2D InSe is intrinsically non-magnetic, a stable ferromagnetic phase appears for hole densities in the range of 0.5×〖10〗^13/cm^2<n<1.9×〖10〗^14/cm^2. Interestingly, hole doping not only induces spontaneous magnetization but also half-metallicity, and hole-doped InSe, presenting one conducting and one insulating spin channel, could be highly promising for next generation spintronic nanodevices. The possibility to induce hole doping and a subsequent ferromagnetic order by intrinsic and extrinsic defects was also investigated. We found that In vacancy creates spin-polarized states close to the valence band and leads to a p-type behavior. Similar to In vacancies, group-V atoms replacing Se atoms lead to a p-type behavior, potentially stabilizing a ferromagnetic order in 2D InSe. },
}